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| LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % * EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % * GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % * EXCELLENT THERMAL STABILITY * BeO FREE PACKAGE * INTERNAL INPUT MATCHING * ESD PROTECTION 1 ORDER CODE LET9130 M265 epoxy sealed BRANDING LET9130 PIN CONNECTION DESCRIPTION The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity. ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W C C -0.5 to +15 15 217 200 -65 to +200 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.6 C/W February, 6 2003 1/6 LET9130 ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section) Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V ID = 10 A VDS = 26 V VDS = 65 V VDS = 0 V ID = TBD ID = 3 A ID = 9 A VDD = 28 V VDS = 26 V f = 1 MHz f = 1 MHz 3 0.19 12 90 4.8 Test Conditions Min. 65 1 10 1 5 0.4 Typ. Max. Unit V A A A V V mho pF pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 920-960 MHz) P1dB D GP Load mismatch POUT(EDGE) VDD = 28 V VDD = 28 V VDD = 28 V IDQ = 1 A IDQ = 1 A IDQ = 1 A POUT = 130 W POUT = 130 W POUT = 130 W 120 48 15 135 51 16 10:1 W % dB VSWR VDD = 28 V IDQ = 1 A ALL PHASE ANGLES 400 KHz < -60 dBc 600 KHz < -70 dBc EVM < 3 % 400 KHz < -60 dBc 600 KHz < -70 dBc EVM < 3 % 45 W D(EDGE) 38 % DYNAMIC (f = 865-895 MHz) P1dB D Load mismatch POUT(CDMA)(1) Gp(CDMA) D(CDMA)(1) (1) IS-95 CDMA VDD = 28 V VDD = 28 V IDQ = 1 A IDQ = 1 A POUT = 135 W POUT = 135 W 120 50 135 55 10:1 25 W % VSWR W dB % VDD = 28 V IDQ = 1 A ALL PHASE ANGLES 750 KHz ACPR: -45dBc 1.98 MHz ACPR: -60dBc VDD = 26 V IDQ = 800 mA POUT = 25 W 16 17 29 750 KHz ACPR: -45dBc 1.98 MHz ACPR: -60dBc Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model 2/6 Class 2 M3 LET9130 TYPICAL PERFORMANCE Power Gain Vs Output Power 18 Efficiency Vs Output Power 60 17 50 Idq = 800 mA Idq = 1 A 16 Gp (dB) 40 Nd (%) Idq = 600 mA 15 30 14 20 13 10 Vdd = 28 V f = 940 MHz 12 0 50 100 Pout (W) 150 200 Vdd = 28 V f = 940 MHz Idq = 1 A 0 50 100 Pout (W) 150 200 0 Input Return Loss Vs Output Power -10 Power Gain Vs Output Power 18 -15 17 16 -20 RL (dB) Tc = 25 C Gp (dB) -25 15 Tc = 85 C 14 Tc = 50 C -30 Vdd = 28 V f = 940 MHz Idq = 1 A -35 0 50 100 Pout (W) 150 200 13 f = 940 MHz Idq = 1 A Vdd=28V 12 0 50 100 Pout (W) 150 200 Power Gain Vs Output Power 18 17 16 Gp (dB) Vdd = 30 V 15 Vdd = 28 V 14 Vdd = 26 V Vdd = 24 V f = 940 MHz Idq = 1 A 13 12 0 50 100 Pout (W) 150 200 3/6 LET9130 TYPICAL PERFORMANCE (BROADBAND) Gain-Efficiency Vs Frequency 18 80 Return Loss Vs Frequency -5 17 Gp 70 -10 -15 60 16 Gp (dB) 15 Nd 50 RL (dB) Nd (%) -20 -25 14 40 -30 13 Pout = 130 W Vdd = 28 V Idq = 1 A 30 -35 Pout=130 W Vdd = 28 V Idq = 1 A 920 930 940 f (MHz) 950 960 970 12 910 20 920 930 940 f (MHz) 950 960 970 -40 910 EVM-Efficiency Vs Output Power 12 Vdd = 28 V Idq = 600 mA f = 960 MHz 60 Spectral Regrowth Vs Output Power -50 10 50 -55 8 EVM (%) 40 Nd (%) Spectral Regrowth (dBc) -60 -65 @ 400 KHz 6 Nd 4 30 -70 20 -75 @ 600 KHz -80 Vdd =28 V Idq = 600 mA f = 960 MHz 2 EVM 10 0 1 10 Pout (W) 100 0 -85 1 10 Pout (W) 100 4/6 LET9130 M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 12.83 5.33 9.91 20.02 34.16 0.15 1.14 1.70 4.32 9.53 28.19 3.51 MIN. .495 .170 .380 .772 1.335 .003 .035 .057 .125 .365 1.090 .118 TYP. MAX .505 .210 .390 .788 1.345 .006 .045 .067 .170 .375 1.110 .138 DIM. A B C D E F G H I J K L MIN. 12.57 4.32 9.65 19.61 33.91 0.08 0.89 1.45 3.18 9.27 27.69 3.00 TYP. Ref. 1023153 5/6 LET9130 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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